Serological survey to estimate SARS-CoV-2 infection and antibody seroprevalence at a large public university: A cross-sectional study

…, K Taylor, V Boyle, B Bobbett, J Kouvetakis… - BMJ open, 2023 - bmjopen.bmj.com
Objective This study investigated the seroprevalence of SARS-CoV-2 antibodies among
adults over 18 years. Design Prospective cohort study. Settings A large public university. …

Serosurvey of SARS-COV-2 at a large public university

…, S Williams, K Taylor, V Boyle, B Bobbett, J Kouvetakis… - medRxiv, 2023 - medrxiv.org
Arizona State University (ASU) is one the largest universities in the United States, with more
than 79,000 students attending in-person classes. We conducted a seroprevalence study …

[PDF][PDF] Serosurvey of SARS-COV-2 at a large public university

S Williams, K Taylor, V Boyle, B Bobbett, J Kouvetakis… - 2023 - scienceopen.com
BMJ Open is committed to open peer review. As part of this commitment we make the peer
review history of every article we publis Page 1 BMJ Open is committed to open peer review. …

Serosurvey of SARS-COV-2 at a large public university (preprint)

…, S Williams, K Taylor, V Boyle, B Bobbett, J Kouvetakis… - 2023 - pesquisa.bvsalud.org
Arizona State University (ASU) is one the largest universities in the United States, with more
than 79,000 students attending in-person classes. We conducted a seroprevalence study …

Synthesis of High Sn Content Ge1–xySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications

J Kouvetakis, PM Wallace, C Xu… - … Applied Materials & …, 2023 - ACS Publications
A systematic effort has been described to grow ternary Ge 1–x–y Si x Sn y semiconductors
on silicon with high Sn concentrations spanning the 9.5–21.2% range. The ultimate goal is …

Tin-based group IV semiconductors: New platforms for opto-and microelectronics on silicon

J Kouvetakis, J Menendez… - Annu. Rev. Mater …, 2006 - annualreviews.org
▪ Abstract New classes of Sn-containing group IV semiconductors are described. Novel CVD
routes lead to growth of a broad range of Ge 1− y Sn y alloys and compounds directly on Si …

Optical critical points of thin-film alloys: A comparative study

…, CL Littler, M Canonico, S Zollner, J Kouvetakis… - Physical Review B, 2006 - APS
The E 0, E 0+ Δ 0, E 1, E 1+ Δ 1, E 0′, and E 2 optical transitions have been measured in
Ge 1− y Sn y alloys (y< 0.2) using spectroscopic ellipsometry and photoreflectance. The …

Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys

VR D'Costa, YY Fang, J Tolle, J Kouvetakis… - Physical Review Letters, 2009 - APS
A direct absorption edge tunable between 0.8 and∼ 1.4 eV is demonstrated in strain-free
ternary Ge 1− x− y Si x Sn y alloys epitaxially grown on Ge-buffered Si. This decoupling of …

Direct-gap photoluminescence with tunable emission wavelength in Ge1− ySny alloys on silicon

…, J Tolle, C Xu, R Roucka, J Kouvetakis… - Applied physics …, 2010 - pubs.aip.org
Direct-gap photoluminescence has been observed at room temperature in Ge 1− y Sn y alloys
grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV (200 nm…

Ge–Sn semiconductors for band-gap and lattice engineering

…, DJ Smith, J Menendez, C Hu, J Kouvetakis - Applied physics …, 2002 - pubs.aip.org
We describe a class of Si-based semiconductors in the Ge 1−x Sn x system. Deuterium-stabilized
Sn hydrides provide a low-temperature route to a broad range of highly metastable …