Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are already …

Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are
reviewed. Data from three de-accelerated tests are presented, which demonstrate a close …

Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …

Despite the potential of GaN-based power transistors, these devices still suffer from certain
parasitic and reliability issues that limit their static and dynamic performance and the …

We review the degradation mechanisms that limit the reliability of GaN-based light-emitting
diodes (LEDs). We propose a set of specific experiments, which is aimed at separately …

Over the last few years, gallium nitride has emerged as an excellent material for the fabrication
of power semiconductor devices. The high critical field (3.3 MV/cm) allows to fabricate …

This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate
economic growth in a semiconductor industry that is silicon-based and currently faced with …

This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility transistors (…

We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting
diodes (LEDs). A number of reliability tests are presented, and specific degradation …